PROJECT TITLE :

Thin-Film Piezoelectric Materials For a Better Energy Harvesting MEMS

ABSTRACT:

Ferroelectric PZT-based perovskite thin films are widely studied for fabrication of compact piezoelectric energy harvesting (EH) power microelectromechanical systems (MEMS) due to their large piezoelectric coefficients. Output energy of the piezoelectric EH power MEMS is chiefly governed by their energy conversion rate, $k^{2}$ and/or $(e^{2}/ varepsilon)$, where $e$ and $varepsilon$ denote their piezoelectric coefficient and dielectric constant. The values of $(e^{2}/varepsilon)$ are considered as figures of merit (FOM) for the piezoelectric EH power MEMS. At present nonferroelectric AlN thin films are considered as a candidate for a better piezoelectric EH power MEMS due to their high FOM values. These PZT-based thin films are mostly polycrystalline thin films of binary perovskite compounds, $hbox{Pb}(hbox{Zr}, hbox{Ti})hbox{O}_{3}$ (PZT). We have proposed single crystal thin films of PZT-based ternary perovskite compounds, $hbox{Pb}(hbox{Mn}, hbox{Nb}) hbox{O}_{3}$-PZT (PMnN-PZT), instead of the binary perovskite PZT. The single crystal PMnN-PZT thin films have been successively fabricated by rf-magnetron sputtering. It is found that the FOM values of single c-domain/single crystal PMnN-PZT thin films are one order of magnitude higher than those of AlN thin films. This suggests output powers of the PMnN-PZT thin-film EH power MEMS are one order of magnitude higher than those of the AlN thin-film EH power MEMS.$hfill$[2011-0165]


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


PROJECT TITLE :Thermal modelling of transfer-bonded thin-film gallium arsenide laser diodeABSTRACT:Two-dimensional temperature distributions of skinny-film edge-emitting gallium arsenide (GaAs) three μm wide ridge lasers transfer-bonded
PROJECT TITLE :A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel ElectrodesABSTRACT:A back-channel-etched fabrication method for amorphous indium–gallium–zinc
PROJECT TITLE :Comparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film TransistorABSTRACT:An amorphous InGaZnO skinny-film transistor with high- Nb2O5 as gate dielectric is ready for the first
PROJECT TITLE :Physically Based Compact Mobility Model for Organic Thin-Film TransistorABSTRACT:A physically based compact mobility model for organic skinny-film transistors (OTFTs) with an analysis of bias-dependent Fermi-energy
PROJECT TITLE :Thin-Film Transistors With Neodymium-Incorporated Indium–Zinc-Oxide SemiconductorsABSTRACT:A skinny-film transistor (TFT) with a neodymium-doped indium–zinc-oxide (NIZO) channel layer was fabricated. It was

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry