Ultraflexible Tactile Piezoelectric Sensor Based on Low-Temperature Polycrystalline Silicon Thin-Film Transistor Technology


During this paper, we gift an ultraflexible tactile sensor, in a very piezo-eletricoxide-semiconductor FET configuration, composed by a poly[vinylidenefluoride-co-trifluoroethylene] capacitor with an embedded readout circuitry, primarily based on nMOS polysilicon electronics, integrated directly on polyimide. The ultraflexible device is designed in keeping with an extended gate configuration. The sensor exhibits enhanced piezoelectric properties, because of the optimization of the poling procedure (with electric field up to three MV/cm), reaching a final piezoelectric coefficient of 47 pC/N. The device has been electromechanically tested by applying perpendicular forces with a minishaker. The tactile sensor, biased in a very common-source arrangement, shows a linear response to increasing sinusoidal stimuli (up to 2 N) and increasing operating frequencies (up to 120zero Hz), getting a response up to 430 mV/N at two hundred Hz for the sensor with the best value of . The sensor performances were also tested once several cycles of controlled bending in several quantity of humidity with the intent to analyze the device behavior in real conditions.

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