Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3 Thin-Film Transistors by Low-Temperature Annealing in Air


High-performance thin-film transistors (TFTs) with atomic layer-deposited (ALD) ZnO channel/Al2O3 dielectric were fabricated under a maximum processing temperature of 200 °C. The effects of postannealing temperature and time on the performance of the TFT were investigated. Underneath annealing at 200 °C in air, the performance of the TFT was greatly improved by increasing the annealing time to one hundred twenty min, showing a terribly low OFF-current of A, a little subthreshold swing (SS) of 244 mV/decade, a quite massive ratio of , and a high field-impact electron mobility of 21.9 cm2/ . Furthermore, good electrical stabilities were also demonstrated beneath gate-bias stress, such as a threshold voltage shift ( ) of − V and a SS of eighty six mV/decade under −twenty V for 300zero s, a of zero.twenty nine V, and a SS of −forty four mV/decade underneath +twenty V for 3000 s. The on top of results are attributed to the gradual passivation of oxygen vacancies in the ZnO channel and interface traps at the interface of ZnO/Al2O3 with an increment of annealing time. Thus, this ZnO TFT with a low thermal budget and high performance is very promising for flexibl- electronic applications.

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