PROJECT TITLE :
A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations
This paper presents results on behavior modeling of a general purpose metal–oxide–semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems requiring accuracy each in steady state and in switching conditions. Strategies of parameters extraction, together with nonlinearity of parasitic capacitances and steady-state characteristics, are based mostly on manufacturer datasheet and externally measurable characteristics. The MOSFET template is written in the MAST language and simulated in the SABER simulator. Experimental validation of the N-channel power MOSFET-kind IRFP240 (Fairchild Semiconductor) rated at 20 A/two hundred V is performed in a dc/dc boost converter. The main features of the developed model have been compared with the properties of an analytical MOSFET model and a general MOSFET model embedded to a SABER simulator.
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