How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis


During this paper, the authors investigate how target sputtering, dose retention, and injury formation is generated in skinny-body semiconductors by means that of energetic ion impacts. The problems related to ion implanting or plasma doping Si thin-bodies are well documented, but, it's not clear how changing the target material to different semiconductors currently being considering for multi-gate field-result transistor devices will counteract or enhance these effects. By means that of binary collision approximation based modeling with the Stopping and Vary of Ions in Matter (SRIM) software, we have a tendency to explore the results of different target atomic density, lattice density, surface binding energies, and lattice binding energies on track sputtering, dose retention, and harm formation.

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