PROJECT TITLE :

IEEE Transactions on Education Reviewers 2015

ABSTRACT:

Thallium bromide (TlBr) could be a wide bandgap, compound semiconductor with high gamma-ray stopping power and promising physical properties. Many surface modification techniques have been demonstrated to extend the lifetime of TlBr devices at space temperature. But, absence of reproducibility in the performance of TlBr detectors (even with low ionic conduction at -twenty°C) suggests presence of unexplored bulk phenomena. Stress in the TlBr crystal thanks to various intrinsic (e.g. grain boundaries and dislocations networks) beside external factors like thermal, mechanical, and electrical loadings explains detector-to-detector variations. Photoelasticity and opto-electrical techniques were applied to visualise and qualitatively correlate the device performance with stress. Changes in stress patterns with variations in ambient temperature were clearly demonstrated. Electrical field fluctuations in TlBr detectors with time were for the primary time observed using the Pockels result.