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Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs”
PROJECT TITLE :
Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs”
ABSTRACT:
In our original work [1], we demonstrated the usage of N-IMP in STI SiO2 to relax the compressive stress within the n-MOSFETs and more improve the core device performance accordingly.
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