Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement


A unique approach to suppress the ambipolar behaviour and enhance RF parameters is proposed for the first time. For this, the dielectric and gate material work perform engineering is employed to suppress the ambipolar behaviour individually. More, the mix of gate dielectric and gate material work function engineering is used to suppress the ambipolar conduction in huge quantity and to eliminate the recent carriers effects. Apart from these, the proposed work improves the ON-state current and RF figures of merit for symmetric devices.

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