PROJECT TITLE :
Optimization of Lateral Superjunction Based on the Minimum Specific ON-Resistance
The optimization methodology of the minimum specific ON-resistance for the lateral superjunction device is proposed based on the ideas of charge and potential electrical fields in this paper. From the method, a brand new relationship between and breakdown voltage is developed, and also the analytical formulas are obtained to directly give the doping concentration and also the drift length . The calculated results, together with the 800 and 1600 V examples, are in sensible agreement with the simulations. The optimized designs also are compared with the present experimental and simulated knowledge. It's shown that from the proposed optimization method is minimum, and also the methodology of is universal.
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