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Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

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PROJECT TITLE :

Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

ABSTRACT:

The stacks of III-V materials, grown on the Si substrate, that are thought-about for the fabrication of highly scaled devices tend to develop structural defects, in explicit threading dislocations (TDs), which have an effect on device electrical properties. We tend to demonstrate that the characteristics of the TD sites will be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution inside a large temperature vary. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, whereas the off-TDs conductivity is dominated by the thermionic emission method.


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Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements - 4.8 out of 5 based on 83 votes

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