Transparent thin-film transistor and diode circuit using graphene and amorphous indium–gallium–zinc-oxide active layer


A transparent thin-film transistor–diode (TFT–diode) circuit through the serial affiliation of a clear TFT and a transparent graphene diode comprised of an amorphous indium–gallium–zinc–oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction thanks to the directional operation of the transparent graphene diode. The ensuing clear TFT–diode device can be applied to clear a-IGZO and graphene integrated circuits.

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