PROJECT TITLE :
Improved high-frequency output equivalent circuit modelling for MOSFETs
An improved MOSFET output equivalent circuit model is proposed to greatly reduce the Y22-parameter error of a standard one in the high-frequency vary more than ten GHz. In this model, a replacement parallel RC network is connected in series with the drain–supply capacitance to model the ac current crowding phenomenon thanks to the vertically distributed RC effect in the saturation region. Its accuracy is clearly validated by finding abundant better agreement up to forty GHz between measured and modelled Y2a pair of-parameter than the conventional one.
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