Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Improved high-frequency output equivalent circuit modelling for MOSFETs

1 1 1 1 1 Rating 4.88 (24 Votes)

PROJECT TITLE :

Improved high-frequency output equivalent circuit modelling for MOSFETs

ABSTRACT:

An improved MOSFET output equivalent circuit model is proposed to greatly reduce the Y22-parameter error of a standard one in the high-frequency vary more than ten GHz. In this model, a replacement parallel RC network is connected in series with the drain–supply capacitance to model the ac current crowding phenomenon thanks to the vertically distributed RC effect in the saturation region. Its accuracy is clearly validated by finding abundant better agreement up to forty GHz between measured and modelled Y2a pair of-parameter than the conventional one.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Improved high-frequency output equivalent circuit modelling for MOSFETs - 4.9 out of 5 based on 24 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...