PROJECT TITLE :
Fabrication of p-pad-up GaN-based thin-film light-emitting diodes with electroplated metallic substrates
A novel methodology has been developed to fabricate p-pad-up GaN-primarily based skinny-film light-weight-emitting diodes (TF-LEDs) with electroplated metallic substrates. Initial, a Ni/Ag/Ni/Au mirror severed as p-contact is completely lined by an insulating SiNx layer, which separates n-contact from the p-contact. Then, a copper layer connected with the n-contact was electroplated to a thickness of concerning 120 μm as a metallic substrate for the sunshine-emitting diode epitaxial wafer. When removal of the initial sapphire substrate with an excimer laser, the exposed GaN layers were selectively etched to the p-contact. Finally, a Cr/Pt/Au multilayer was deposited onto the p-contact to complete the entire p-pad-up TF-LED structure. The p-pad-up TF-LEDs exhibit superior electrical and optical properties at high driven current densities.
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