A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured With the Width-Adjusting Pulse Operation Method


The correlation between the set time ( ) and also the initial off-state resistance ( ) statistics for a Ti/ZrO2/Pt bipolar resistive random access memory device was investigated. The width-adjusting pulse operation method, which can significantly improve the switching uniformity, was used to accurately measure , and therefore the gathered statistical data were analyzed using Weibull distributions. Each the Weibull slope ( ) and the dimensions issue ( ) of distributions were found to increase logarithmically with . The observed interdependence provides a tenet in improving the switching uniformity and optimizing the tradeoff between set speed and disturb immunity. An analytical cell-primarily based model was developed to clarify the -dependent statistics, that can be implemented in statistical compact models and circuit simulators for improving RRAM cell style and memory performances.

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