2 ps resolution, fine-grained delay element in 28 nm FDSOI

PROJECT TITLE :

2 ps resolution, fine-grained delay element in 28 nm FDSOI

ABSTRACT:

A unique diversely body-biased current-starved delay element (DE) design for fine-grained DEs is presented. Using absolutely depleted silicon-on-insulator back-body biasing, it achieves a resolution of 2 ps with a delay quantisation error of seven.1p.c. Compared with the state-of-the-art DEs, it exhibits the smallest amount leakage current and efficient overall energy consumption and is the most strong to method variations.

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