Selective Gas Sensing With -BN Capped MoS2 Heterostructure Thin-Film Transistors


Owing to their final surface-to-volume ratio 2-dimensional (2D) van der Waals materials are candidates for flexible gas sensor applications. However, all demonstrated devices had relied on direct exposure of the active 2D channel to gases, that presents issues for their reliability and stability. We tend to demonstrated, for the primary time, selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance modification, AR/R, was used as a sensing parameter to detect chemical vapors. It absolutely was found that h-BN dielectric passivation layer does not forestall gas detection via changes in the present within the MoS2 channel. The detection without direct contacting the channel with analyte molecules was achieved with AR/R ratio as high as 103. Still, we tend to show that the employment of h-BN cap layers (thickness H~ten nm) improves sensor stability and prevents degradation due to environmental and chemical exposure.

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