Experiment and Simulation of the Nonlinear and Transient Responses of GaAs PHEMT Injected With Microwave Pulses


The nonlinear and transient responses of gallium arsenide pseudomorphic high electron mobility transistor (GaAs PHEMT) injected with microwave pulses are studied in this paper. The experimental analysis results show that the feature of the output power of the GaAs PHEMT is from linear increase to saturation to linear increase again because the input power increases; and also the feature of the measured output time domain waveforms is from linearity to saturation to reversion as the input power will increase. The simulation model for analyzing the GaAs PHEMT with microwave pulses is established by TCAD. The nonlinear feature of GaAs PHEMT analyzed through simulation is in line with measurement. Similarly, the sphere, current density, and temperature distribution inside the transistor injected with microwave pulses are discussed.

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