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An Ultra-Wideband Low-Loss Millimeter-Wave Slow-Wave Wilkinson Power Divider on 0.18 $mu$ SiGe BiCMOS Process

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PROJECT TITLE :

An Ultra-Wideband Low-Loss Millimeter-Wave Slow-Wave Wilkinson Power Divider on 0.18 $mu$ SiGe BiCMOS Process

ABSTRACT:

An ultra-wideband low-loss millimeter-wave Wilkinson power divider has been developed on a zero.18 SiGe BiCMOS process. The miniaturization and low loss of the facility divider are achieved by utilizing capacitive loading and a slow-wave CPW structure configured with floating metal strips periodically placed orthogonal to the CPW. The developed power divider has very wideband performance from DC to 67 GHz with less than one dB insertion loss from DC to sixty one GHz, amplitude and section imbalances but 0.five dB and a couple of from DC to 67 GHz, respectively, and isolation bigger than fifteen dB across 37–sixty seven GHz. At sixty GHz, the designed power divider has only 0.9 dB of insertion loss and higher than twenty five dB of isolation. The core chip size is .


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An Ultra-Wideband Low-Loss Millimeter-Wave Slow-Wave Wilkinson Power Divider on 0.18 $mu$ SiGe BiCMOS Process - 4.8 out of 5 based on 25 votes

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