Design and measurement of class EF2 power oscillator


A class EF2 power oscillator designed in standard 130 nm CMOS at a pair of.five GHz frequency is presented. The oscillator depends on an instantaneous path based mostly on an influence amplifier and a feedback path based mostly on passive parts and an MOS varactor. Category EF2 is employed to cut back voltage stress across the switch, enabling a better output power for trendy transistors with low breakdown voltage. The measurement on a category EF2 power oscillator at radio frequency (RF) is presented for the primary time. The circuit achieves 17.sixty five dBm output power from a a pair of.five V provide voltage with 27.onep.c DC-RF efficiency and presents a a hundred and fifty MHz tuning range. The measured section noise is -a hundred and one.six dBc/Hz at 1 MHz offset. The circuit was implemented in normal a hundred thirty nm CMOS technology and consumed a complete area of one.95 mm2. To the authors' data this class EF2 power circuit has never been presented either at RF frequencies or in an integrated technology.

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