RF Performance of Planar III–V Nanowire-Array Transistors Grown by Vapor–Liquid–Solid Epitaxy


The radio frequency (RF) performance of a III-V transistor comprised of nanowire (NW) high-electron mobility channels, grown by planar vapor-liquid-solid epitaxy in parallel arrays, is examined. An equivalent tiny-signal circuit model was used to check the contributing extrinsic and intrinsic passive elements on the NW performance as a perform of bias and gate length (LG). Adequate intrinsic gain (gm/gds) ~twenty five with low intrinsic (Ri) and terminal resistances (RG, RS, RD) result in an fT/f max ~ thirty/78 GHz for LG = a hundred and fifty nm and NW diameter ~one hundred sixty nm. The gate capacitance (Cg) is extracted and ~2/three of the overall Cg is parasitic, that can be reduced with denser NW arrays. Excellent agreement between measured and modeled RF performance is achieved.

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