Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

High-voltage AlGaN/GaN HFETs by using graded gate field plates

1 1 1 1 1 Rating 4.80 (25 Votes)

ABSTRACT:

High-voltage AlGaN/GaN heterostructure field-effect transistors (HFETs) with graded gate field-plate (FP) structures were fabricated to investigate the effectiveness of a linearly graded FP structure on current collapse. To improve the reproducibility of the FP structure manufacturing process, a simple process for a linearly graded SiO2 profile formation was developed. A HFET with a 23°-angle FP exhibited a significantly decreased on-resistance increase ratio of 1.16 after application of a drain bias of 600 V.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


High-voltage AlGaN/GaN HFETs by using graded gate field plates - 4.8 out of 5 based on 25 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...