Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

4H-SiC BJTs with epitaxial junction termination composite structure

1 1 1 1 1 Rating 4.89 (37 Votes)

ABSTRACT:

The proposed novel structure can be applied to junction termination technology to fabricate 4H-SiC bipolar junction transistors (BJTs) by using epitaxial junction termination extension (JTE) to eliminate the curvature effect of the base-collector junction terminal. Furthermore, accurate p-type dopants such as floating field limiting rings (FFLRs) have been implanted in the different zones of an epitaxial JTE to achieve the different charge distribution at the terminal of the main junction and JTE to decrease the peak electric field of the surface. Compared with the conventional JTE and FFLRs, the novel device can achieve a higher breakdown voltage by 20% and 39% added without the loss of current gain. Moreover, the novel structure not only simplifies the production of conventional SiC BJTs terminal process but also avoids the lattice injury for many ion implantations to produce the complex multiple JTE and FFLRs.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


4H-SiC BJTs with epitaxial junction termination composite structure - 4.9 out of 5 based on 37 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...