An array of inverted InGaAs metal-semiconductor-metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In-Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 μm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70% compared to the front illuminated MSM measured prior to bonding while the dark current reduces slightly after bonding.

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