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Integration of inverted ingaas MSM array on Si substrate through low temperature wafer bonding

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ABSTRACT:

An array of inverted InGaAs metal-semiconductor-metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In-Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 μm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70% compared to the front illuminated MSM measured prior to bonding while the dark current reduces slightly after bonding.


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Integration of inverted ingaas MSM array on Si substrate through low temperature wafer bonding - 4.9 out of 5 based on 70 votes

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