An array of inverted InGaAs metal-semiconductor-metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In-Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 μm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70% compared to the front illuminated MSM measured prior to bonding while the dark current reduces slightly after bonding.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here