PROJECT TITLE :
Highly reproducible tunnel currents in MBE-grown semiconductor multilayers
Tunnel currents through semiconductor tunnel barriers have proved terribly troublesome to control to the extent that device-to-device variability and wafer-to-wafer irreproducibility have prevented electronic devices primarily based on tunnelling from ever going into production. With reference to one tunnel barrier of AlAs in a very GaAs multilayer structure with an asymmetric doping profile, it's shown that, with careful attention to detail, diodes from equivalent sites on 3 separate wafers will be produced whose average current in forward bias is among 1 whereas the total in-wafer customary deviation of current at the same fixed bias (zero.five V) is half-dozen , dominated by a systematic cross-wafer variation that is described. This level of reproducibility currently permits these devices to be utilized in decide-and-place systems for the manufacture of low-price hybrid integrated microwave circuits.
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