PROJECT TITLE :
Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetry
Since it's troublesome to search out the analytical answer of the governing Poisson equation for double gate MOSFETs with the body doping term included, the bulk of the compact models are developed for undoped-body devices for which the analytical resolution is accessible. Proposed is a straightforward technique to included a body doping term in such surface potential based common double gate MOSFET models additionally by taking under consideration any differences between the gate oxide thickness. The proposed technique is validated against TCAD simulation and found to be correct as long because the channel is fully depleted.
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