Over 70% PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-band


Reported may be a design methodology to efficiently control supply and cargo impedances of an influence GaN HEMT at the second-harmonic frequency within a metal ceramic package. Second-harmonic supply control is additional precisely investigated. A selected filter is implemented at the gate side among the package to transform external source impedances into negative reactances seen by the inner device at second-harmonic frequencies. Whatever the external source termination presented at second-harmonic frequencies, supply impedances seen by the inner die are confined to high potency regions. This methodology is applied to a twenty W packaged GaN HEMT using internal control of input and output second-harmonic impedances to reach more than seventy of power-added-efficiency (PAE) on thirty relative bandwidth in S-band.

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