10 dB small-signal graphene FET amplifier


Reported is that the realisation of a graphene FET microwave amplifier operating at one GHz, exhibiting a tiny-signal power gain of ten dB and a noise figure of vi.four dB. The amplifier utilises an identical inductor on the gate yielding a come loss of 20 dB. The planning is optimised for maximum gain and the optimum noise figure is extracted by noise modelling and predicted to be shut to one dB for the intrinsic graphene FET at this frequency. The presented results complement existing graphene FET applications and are promising for future graphene microwave circuits.

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