Oxide TFT inverter with wide output dynamic range


Demonstrated is an n-channel oxide thin film transistor (TFT) inverter which achieves wider output dynamic range than a typical one over the massive threshold voltage range of oxide semiconductors. A proposed circuit adopts the 2-stage inverter structure with two negative supplies and brings about low power consumption and fast rising transition additionally. Simulation results show that the dynamic range is increased by 55.08% while power consumption and rising time are reduced by 23.71% and 60.54p.c, compared to a typical one, on average.

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