Fabrication of void-free copper filled through-glass-via for wafer-level RF MEMS packaging


A unique fabrication method of copper stuffed through-glass-via is presented for wafer-level RF MEMS packaging. By using glass reflow and seedless electroplating method, a void-free copper via with a swish aspect wall can be obtained. This allows a vertical interconnection between the electrical pads through the glass substrate. Furthermore, the proposed through-glass-via was applied to the packaging of a CPW transmission line to analyze its effects on the RF performances. For the encapsulation of the packaged device, that is that the CPW line in this case, the glass cap with the cavity is anodically bonded to the substrate. The measured insertion loss of the full packaging together with the copper vias and the CPW line lined with the glass cap was zero.197 dB and therefore the come back loss was twenty.032 dB at twenty GHz.

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