Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Diode string with reduced clamping-voltage for ESD-protection of RF-circuits

1 1 1 1 1 Rating 4.80 (49 Votes)

PROJECT TITLE :

Diode string with reduced clamping-voltage for ESD-protection of RF-circuits

ABSTRACT:

A new diode string based ESD device is proposed. This device, realised in a 0.13 m SiGe BiCMOS process, features a reduced clamping voltage compared to a conventional diode string topology. The addition of extra stages improves the relative reduction in clamping voltage of the device further and, as for a regular diode string, reduces the parasitic capacitance of the device. Hence the proposed circuit constitutes an excellent candidate for double-diode configurations commonly used to protect RF-pads. The proposed architecture is verified by means of simulation and transmission-line pulse tests. Measurement results of a four-stage version of the proposed diode string show a reduction of 28.5 in clamping voltage, realising an absolute clamping-voltage lower than that of a three-stage diode string.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Diode string with reduced clamping-voltage for ESD-protection of RF-circuits - 4.8 out of 5 based on 49 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...