Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes


Electron-leakage is a deep-rooted problem for nitride-based mostly light-weight-emitting diodes (LEDs), particularly for AlGaN-primarily based deep-ultraviolet (DUV) LEDs. During this paper, a selected style for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al composition of the last quantum barrier to the same worth as that of the electron-blocking layer accompanied with composition-graded p-AlGaN layer, is proposed to scale back electron leakage. Simulation results demonstrate that this style will effectively cut back electron leakage and hence increase internal quantum potency. Furthermore, fabricated devices with at an emitting wavelength of 292 nm verify remarkably enhanced light-output power. At twenty-mA injection current, the proposed structure achieved a light-weight-output increment as high as ninety eight%, compared with the standard structure.

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