PROJECT TITLE :
Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission
Self-heating of FinFET transistors may be a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent modulation of the OFF-state leakage current of individual transistors, noninvasively and with high time accuracy. Totally different device geometries and operating conditions are evaluated and compared.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here