Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission


Self-heating of FinFET transistors may be a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent modulation of the OFF-state leakage current of individual transistors, noninvasively and with high time accuracy. Totally different device geometries and operating conditions are evaluated and compared.

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