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A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes

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PROJECT TITLE :

A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes

ABSTRACT:

A back-channel-etched fabrication method for amorphous indium–gallium–zinc oxide (a-IGZO) skinny-film transistors is proposed, in that an alumium-doped ZnO (AZO) transparent conductive film is used to create both supply/drain and pixel electrodes. It is demonstrated that rinsed acetic acid answer encompasses a high etching selectivity over 100:one between AZO and a-IGZO. In addition, bus and interconnect lines are fashioned in a very separate fabrication step during this method, therefore that the Cu method could be adopted without bringing contamination issue.


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A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes - 4.9 out of 5 based on 24 votes

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