Physically Based Compact Mobility Model for Organic Thin-Film Transistor


A physically based compact mobility model for organic skinny-film transistors (OTFTs) with an analysis of bias-dependent Fermi-energy ( ) movement within the bandgap ( ) is presented. Mobility in the localized and extended energy states predicts the drain-current behavior in the weak and strong accumulation operations of OTFTs, respectively. A hopping mobility model as a operate of the surface potential is developed to explain the carrier transport through localized energy states located inside . The Poole–Frenkel parallel-field-result mobility and vertical-field-result mobility are thought of to interpret the bandlike carrier transport in the extended energy states. The parallel field impact on mobility is more pronounced for shorter channel length OTFTs and is taken into account by developing a channel-length-dependent mobility model. The vertical field result on mobility is included to account for the impact of mobility on carrier transport at high gate-voltage-induced fields. We also compared the model results with a pair of-D device simulations and measurements to verify the developed mobility model.

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