PROJECT TITLE :
Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors
The results of TaN Cu diffusion barrier in Cu-gate ZnO:N thin-film transistors (TFTs) were studied. Bias stress tests were performed on Cu-gate TFTs with atomic layer deposited Al2O3 and HfO2 gate insulators. The mobility, the threshold voltage, and therefore the reliability were considerably improved by applying a TaN diffusion barrier at the interface between the Cu gate and also the gate insulator. The reduction in Cu diffusion by the diffusion barrier may be a key process that will increase device stability and leads to improved oxide TFT performance.
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