Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers


The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from twenty five °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures thanks to the increasing thermal conductivity of the amorphous SiNx interlayer, so potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable data for assessing the thermal resistance and reliability of devices.

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