Electromigration Lifetime Optimization by Uniform Designs and a New Lifetime Index


In this paper, we tend to report electromigration (EM) reliability optimizations using highly efficient uniform style (UD). Considering the big error that results from using a single lifetime index, and the different EM failure modes, we have a tendency to introduce a replacement proportion index incorporating early failures to complete the shortage of using a single ancient intrinsic lifetime index in our Design of Experiments (DOE). Applying a supersaturated UD DOE, we have a tendency to greatly reduce ($> 70hbox%$ savings) the quantity of wafers employed in experiments, comparing to the classical RSM style. This very economic experiment has successfully maximized EM lifetimes, which are a lot of than 10 times longer, and without early failure, in a very much shorter period of your time.

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