PROJECT TITLE :
Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage
We report on the polarization engineering of GaN/AlGaN heterostructures for the development of III-Nitride photodetectors through physics-primarily based device simulations. Various heterojunction p-i-n and p-i-n-i-n styles are proposed and analyzed in this context. Our analysis shows that the introduction of a better-bandgap AlGaN layer and n-sort doped composition graded interlayers reduce operating voltage of an avalanche photodetector (APD) by virtually forty% while enabling backside illumination geometry that's essential for the belief of detector arrays. The results of the simulation studies predict an APD device style that is less prone to premature breakdown outside of the multiplication region thanks to superior electric field confinement.
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