Reconfigurable Piezoelectric MEMS Resonator Using Phase Change Material Programmable Vias


This paper reports on the demonstration of a reconfigurable aluminum nitride (AlN) piezoelectric microelectromechanical systems (MEMS) resonator using part change material (PCM) programmable vias. Two $10hbox-mu textmtimes 10hbox-mu textm$ Ge50Te50 PCM programmable vias are monolithically integrated with a piezoelectric MEMS resonator, and used to dynamically reconfigure the terminal connections of its top and bottom electrodes, that determine the distribution of the electric field across the piezoelectric layer and thus the equivalent electrical impedance of the resonator. The power to reconfigure the device to control in four different states is experimentally demonstrated: 1) lateral field excitation mode (both vias $scriptstyle OFF$ ); two) resonator static capacitance, $C_0approx 484~rm fF$ ; 3) motional resistance, $R_mapprox 320~Omega$ ; four) thickness field excitation mode-high impedance (via one $scriptstyle ON$ , $C_0approx 564~rm fF$ ; $R_mapprox 470~Omega )$ ; five) thickness field excitation mode-low impedance (via two $mathbfscriptstyle ON$ , $C_0approx 1459~rm fF$ ; $R_mapprox 155~Omega )$ ; and 6) SHORT (each vias

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