PROJECT TITLE :
Theory of Superjunction With NFD and FD Modes Based on Normalized Breakdown Voltage
A new relationship between the precise ON-resistance and breakdown voltage for the balanced symmetric superjunction (SJ) device is presented to provide the lowest for a given . The look formulas, including the doping density NW and therefore the drift length , are given for each the nonfull depletion (NFD) and the complete depletion SJ devices with an introduction of the normalized issue . For the NFD SJ MOSFET, an relationship is obtained. The analytical results show smart agreement with the numerical results.
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