PROJECT TITLE :
Specific Features of the Injection Processes Dynamics in High-Power Laser Thyristor
A dynamic model of a laser thyristor based on a semiconductor heterostructure has been developed. The model takes into thought for the first time the optically activated impact ionization in the house-charge region (SCR) and the nonlinear photogeneration of excess carriers in the base region, with the latter accounting for the threshold nature of the optical emission. It is shown that the most flip-ON rate of the laser thyristor is determined by the impact ionization rate within the SCR of the collector p-n junction, and the most current, by the rate of photogeneration of excess carriers in the bottom region. A satisfactory agreement between the calculated and experimental voltage and current waveforms is demonstrated.
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