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Integrated a-Si:H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses

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PROJECT TITLE :

Integrated a-Si:H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses

ABSTRACT:

A hydrogenated amorphous silicon (a-Si:H) skinny-film transistor (TFT) gate driver on array with low-level holding TFTs (LLH TFTs) biased below bipolar pulse is investigated. It's shown that the bipolar bias at low frequency significantly alleviates the brink voltage shift of the LLH TFTs. Thus, the lifetime of the proposed gate driver is demonstrated to be several times of that underneath the traditional unipolar pulse bias. Additionally, the development in the lifetime becomes a lot of significant at the higher work temperature. The liquid crystal show television panels (thirty two-in, ) with the proposed a-Si:H gate drivers integrated on array are manufactured, and also the feasibility of the proposed driving scheme is well verified.


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Integrated a-Si:H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses - 4.8 out of 5 based on 90 votes

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