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High-Precision Wafer-Level Cu–Cu Bonding for 3-DICs

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PROJECT TITLE :

High-Precision Wafer-Level Cu–Cu Bonding for 3-DICs

ABSTRACT:

A high-precision Cu–Cu bonding system for 3-D ICs (three-DICs) fabrication adopting a brand new precision alignment methodology is proposed. A new pressure profile control system is applied in the thermocompression bonding process. Experimental results show that the alignment capability is 250 nm or better, with similar overlay accuracy ( average for permanent bonding. These developments are expected to contribute to the fabrication of future 3-DICs.


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High-Precision Wafer-Level Cu–Cu Bonding for 3-DICs - 4.5 out of 5 based on 2 votes

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