High-Precision Wafer-Level Cu–Cu Bonding for 3-DICs


A high-precision Cu–Cu bonding system for 3-D ICs (three-DICs) fabrication adopting a brand new precision alignment methodology is proposed. A new pressure profile control system is applied in the thermocompression bonding process. Experimental results show that the alignment capability is 250 nm or better, with similar overlay accuracy ( average for permanent bonding. These developments are expected to contribute to the fabrication of future 3-DICs.

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