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Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures With and Without Te-Doped Interfaces

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PROJECT TITLE :

Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures With and Without Te-Doped Interfaces

ABSTRACT:

A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. 2 varieties of structures, namely, uncompensated and Te compensated, are investigated using current–voltage, capacitance–frequency, conductance–frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A better variety of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.


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Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures With and Without Te-Doped Interfaces - 4.8 out of 5 based on 72 votes

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