Analysis and Equivalent-Circuit Model for CMOS On-Chip Multiple Coupled Inductors in the Millimeter-Wave Region


A growing number of on-chip inductors are applied in the millimeter-wave IC design. The coupling effects between them have a negative impact on the performance of the circuit and each on-chip inductor. In this paper, a brand new equivalent-circuit model and a parameter extraction method for multiple on-chip inductors within the millimeter-wave region are proposed. The impacts of coupling effects on each on-chip inductor are comprehensive thought-about in the proposed parameter extraction method. The characteristics of the multiple on-chip-coupled inductors are analyzed, modeled, and measured. The check structures were fabricated by zero.18- and ninety-nm CMOS processes. The inductances, quality factors, and S-parameters of the model agree well with the measured performance of on-chip-nested and aspect-by-facet-coupled inductors over a large frequency range from ten MHz up to millimeter-wave frequency band.

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