PROJECT TITLE :
High-Voltage Organic Thin-Film Transistors on Flexible and Curved Surfaces
A pentacene (C22H14)-based mostly high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a versatile substrate. The HVOTFT showed minimal degradation of the present–voltage ( – ) characteristics under flexure. Per the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very giant drain-to-supply voltages ( V) with a comparatively lower controlling voltage (0 V). The HVOTFT was evaluated with 3 different gate insulators to assess how the dielectric constant and interface states influence device performance. Thanks to the high electrical field generated within the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported during a-Si-primarily based high-voltage TFTs, plus from a nonsaturating – characteristic behavior like the short-channel effects found in FETs. A field plate was implemented to boost charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device – will be modeled with the existing Si-based FET models.
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