Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel


Charge-trapping (CT) flash memory devices with Ge channel are studied for the primary time. The operation characteristics of Ge-channel devices with totally different interfacial layers (IL), together with GeO2, GeON, and AlON, are investigated. The programming/erasing speeds of devices with Ge channel will be significantly improved as compared with those with Si or SiGe channel. The retention properties of Ge-channel CT flash devices are abundant enhanced with a stacked tunneling layer shaped by the low-temperature processes. However, the endurance characteristics of Ge-channel devices need improvement as compared with those of Si-channel devices. This may be resolved by a high-quality IL fashioned with an electron cyclotron resonance system and passivated with a H2 treatment.

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