Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs


Low-frequency noise measurements were performed on n-channel MOSFETs with a novel ultra-low 0.3-nm equivalent-oxide-thickness (EOT) interfacial layer (TmSiO) and two totally different bulk high- dielectrics (Tm2O3 and HfO2). The MOSFETs were fabricated in a very gate-last method and the full gate-stack EOT was 1.2 and zero.sixty five nm for the Tm2O3 and HfO2 samples, respectively. In general, both gate-stacks resulted in 1/ kind of noise spectra and noise levels comparable with the traditional SiO2/HfO2 devices with similar EOTs. The extracted average effective oxide entice density was and cm eV for TmSiO/HfO2 and TmSiO/Tm2O3, respectively. Therefore, the most effective noise performance was observed for the gate-stack with Tm2O3 bulk high- layer and we have a tendency to suggest that the interface free single-layer atomic layer deposition (ALD) fabrication theme might explain this.

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