Control of Epitaxial Growth of SiGe


Silicon-Germanium (SiGe), used to spice up pFET performance and enhance the properties of high- metal gate devices, is grown by selective epitaxy on silicon. Since device parameters depend critically on the deposited SiGe thickness, we have a tendency to apply many advanced techniques to regulate deposition. Feedback and feed-forward of growth rate knowledge is employed to control deposition tools. We conjointly apply a pattern-density based predictive growth rate, since pattern density effects cause the deposited thickness to be completely different across completely different product chips beneath otherwise identical conditions. We have a tendency to use run to run analysis of deposition information and a feature of the deposition tool to tune cross wafer deposition rates for optimized uniformity. Finally, we tend to take into account local (at intervals chip) growth rate variation. We have a tendency to demonstrate that the deposited layer thickness is in acceptable range for device performance across a product chip.

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