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3-D Integration and Through-Silicon Vias in MEMS and Microsensors

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PROJECT TITLE :

3-D Integration and Through-Silicon Vias in MEMS and Microsensors

ABSTRACT:

After 2 decades of intensive development, three-D integration has proven invaluable for permitting integrated circuits to adhere to Moore's Law while not desirous to continuously shrink feature sizes. The 3-D integration is additionally an enabling technology for hetero-integration of microelectromechanical systems (MEMS)/microsensors with totally different technologies, like CMOS and optoelectronics. This three-D hetero-integration allows for the development of highly integrated multifunctional microsystems with tiny footprints, low cost, and high performance demanded by rising applications. This paper reviews the following aspects of the MEMS/microsensor-centered 3-D integration: fabrication technologies and processes, processing issues and ways for three-D integration, integrated device configurations and wafer-level packaging, and applications and industrial MEMS/microsensor merchandise using 3-D integration technologies. Of explicit interest throughout this paper is the hetero-integration of the MEMS and CMOS technologies.


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3-D Integration and Through-Silicon Vias in MEMS and Microsensors - 4.9 out of 5 based on 24 votes

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